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*原厂原装无铅现货，11+，2500/盘
The *4CL6*-GTR is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. The *4CL6*-GTR provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The *4CL6*-GTR performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling.
Parametrics
*4CL6*-GTR absolute maximum ratings: (1)Power Supply Voltage with respect to VSS:-1.0V to +5.0V ; (2)Voltage on any pin with respect to VSS:-1.0V to +5.0V and VIN < VDD+1.0V; (3)Storage Temperature:-55℃ to +125℃; (4)Lead Temperature (Soldering, 10 seconds):300℃; (5)Electrostatic Discharge Voltage: Human Body Model(JEDEC Std J*D22-A114-B):4kV, Machine Model(JEDEC Std J*D22-A115-A):300V; (6)Package Moisture Sensitivity Level:MSL-1 .
Features
*4CL6*-GTR features: (1)Organized as 8,192 x 8 bits ; (2)Unlimited Read/Write Cycles ; (3)45 year Data Retention ; (4)NoDelay Writes ; (5)Advanced High-Reliability Ferroelectric Process ; (6)Up to 1 MHz maximum bus frequency ; (7)Direct hardware replacement for EEPROM ; (8)Supports legacy timing for 100 kHz & 400 kHz ; (9)Low Power Operation ; (10)True 2.7V to 3.6V Operation ; (11)75 μA Active Current (100 kHz) ; (12)1 μA Standby Current ; (13)Industrial Temperature -40℃ to +85℃; (14)8-pin SOIC and 8-pin DFN Packages ; (15)“Green” Packaging Options.
