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*原厂原装无铅现货，10+，2500/盘，老版本的货
The *4CL16-GTR is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. The *4CL16-GTR provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the *4CL16-GTR performs write operations at bus speed. No write delays are incurred.
Parametrics
*4CL16-GTR absolute maximum ratings: (1)Power Supply Voltage with respect to VSS:-1.0V to +5.0V ; (2)Voltage on any pin with respect to VSS:-1.0V to +5.0V and VIN < VDD+1.0V ; (3)Storage Temperature:-40℃ to + 125℃; (4)Lead temperature (Soldering, 10 seconds):300℃; (5)Electrostatic Discharge Voltage: Human Body Model(JEDEC Std J*D22-A114-B):4kV, Machine Model(JEDEC Std J*D22-A115-A):300V ; (6)Package Moisture Sensitivity Level:MSL-1.
Features
*4CL16-GTR features: (1)Organized as 2,048 x 8 bits ; (2)Unlimited Read/Write Cycles ; (3)45 year Data Retention ; (4)NoDelay Writes ; (5)Advanced High-Reliability Ferroelectric Process; (6)Up to 1MHz Maximum Bus Frequency ; (7)Direct Hardware Replacement for EEPROM; (8)Industrial Temperature -40℃ to +85℃; (9)8-pin SOIC and 8-pin TDFN Packages ; (10)TDFN Footprint Conforms to TSSOP-8 ; (11)“Green” Packaging Options.
