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*原厂原装无铅现货，09+，2500/盘
The *4C256-GTR is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. The *4C256-GTR provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The *4C256-GTR performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling.
Parametrics
*4C256-GTR absolute maximum ratings: (1)Voltage on VDD with respect to VSS:-1.0V to +7.0V ; (2)Voltage on any signal pin with respect to VSS:-1.0V to +7.0V and VIN < VDD+1.0V; (3)Storage Temperature:-55℃ to +125℃; (4)Lead temperature (Soldering, 10 seconds):300℃; (5)Electrostatic Discharge Voltage: Human Body Model(JEDEC Std J*D22-A114-B):4kV, Machine Model(JEDEC Std J*D22-A115-A): 400V ; (6)Package Moisture Sensitivity Level:MSL-1 .
Features
*4C256-GTR features: (1)Organized as 32,768 x 8 bits ; (2)High Endurance 10 Billion (1010) Read/Writes ; (3)45 year Data Retention ; (4)NoDelay Writes ; (5)Advanced High-Reliability Ferroelectric Process ; (6)Up to 1 MHz Maximum Bus Frequency ; (7)Supports Legacy Timing for 100 kHz & 400 kHz ; (8)5V Operation ; (9)200 μA Active Current (100 kHz) ; (10)100 μA Standby Current ; (11)Industrial Temperature -40℃ to +85℃; (12)8-pin EIAJ SOIC ; (13)“Green” Packaging Option.
