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*原厂原装无铅，07+，现货
The *5640-GA is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. The *5640-GA provides reliable data retention for years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The *5640-GA provides substantial benefits to users of serial EEPROM, in a hardware drop-in replacement. The device uses the high-speed SPI bus, which enhances the high-speed write capability of FRAM technology.
Parametrics
*5640-GA absolute maximum ratings: (1)Power Supply Voltage with respect to VSS:-1.0V to +7.0V ; (2)Voltage on any pin with respect to VSS:-1.0V to +7.0V and VIN < VDD+1.0V ; (3)Storage Temperature:-55℃ to + 125℃ ; (4)Lead Temperature (Soldering, 10 seconds):300℃ ; (5)Electrostatic Discharge Voltage:Human Body Model (JEDEC Std J*D22-A114-B):4.5kV, Charged Device Model:(JEDEC Std J*D22-C101-A):1.25kV ; (6)Package Moisture Sensitivity Level:MSL-1.
Features
*5640-GA features: (1)Organized as 8,192 x 8 bits; (2)High Endurance 1 Trillion (1012) Read/Writes; (3)NoDelay Writes; (4)Advanced high-reliability ferroelectric process; (5)Up to 4 MHz maximum bus frequency; (6)Direct hardware replacement for EEPROM; (7)SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1); (8)Hardware Protection; (9)Software Protection; (10)10 μA Standby Current; (11)Automotive Temperature -40℃ to +125℃; (12)“Green”/RoHS 8-pin SOIC.
