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产品信息
The *4C0*-GTR is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. The *4C0*-GTR provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The *4C0*-GTR performs write operations at bus speed. No write delays are incurred. Data is written to the memory array in the cycle after it has been successfully transferred to the device.
Parametrics
*4C0*-GTR absolute maximum ratings: (1)Power Supply Voltage with respect to VSS:-1.0V to +7.0V ; (2)Voltage on any pin with respect to VSS:-1.0V to +7.0V and VIN < VDD+1.0V; (3)Storage Temperature:-55℃ to + 125℃; (4)Lead temperature (Soldering, 10 seconds):260℃; (5)Electrostatic Discharge Voltage:Human Body Model (AEC-Q100-002 Rev. E):3kV, Charged Device Model (AEC-Q100-011 Rev. B):1.25kV, Machine Model (AEC-Q100-003 Rev. E):250V ; (6)Package Moisture Sensitivity Level:MSL-1.
Features
*4C0*-GTR features: (1)Organized as 512 x 8 bits ; (2)High Endurance 1012 Read/Writes ; (3)38 Year Data Retention ; (4)NoDelay Writes ; (5)Advanced High-Reliability Ferroelectric Process ; (6)Up to 1 MHz maximum bus frequency ; (7)Direct hardware replacement for EEPROM ; (8)Supports legacy timing for 100 kHz & 400 kHz ; (9)Low Power Operation ; (10)5V operation ; (11)100 μA Active Current (100 kHz) ; (12)4 μA (t*.) Standby Current ; (13)Industrial Temperature -40℃ to +85℃; (14)8-pin “Green”/RoHS SOIC (-G).
